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PED30D08M PDFN3.3x3.3-8L
PED30D08M是VDS=30V，ID=22A，RDS(ON)<22m?@VGS=10V，RDS(ON)<30m?@VGS=4.5V的N沟道MOSFET。PED30D08M的丝印是30D08M，PED30D08M提供PDFN3.3x3.3-8L封装。
The PED30D08M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wid
The PED30D08M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wid
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PED30D08M概述：
PED30D08M是VDS=30V，ID=22A，RDS(ON)<22m?@VGS=10V，RDS(ON)<30m?@VGS=4.5V的N沟道MOSFET。PED30D08M的丝印是30D08M，PED30D08M提供PDFN3.3x3.3-8L封装。
The PED30D08M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PED30D08M特性：
VDS = 30V, ID = 22A
RDS(ON) < 22m? @ VGS=10V
RDS(ON) < 30m? @VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PED30D08M应用：
PWM applications
Load switch
Power management
PED30D08M典型应用及引脚：
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