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    单N-MOS

    PE8203 SOT23-6L

        PE8203是VDS=18V,ID=6.5A，RDS(ON)<20m?，@VGS=4.5V，RDS(ON)<21m?，@VGS=3.8V，RDS(ON)<28m?，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
        PE8203的丝印是8203.PE8203提供SOT-23-6L封装.
        The PE8203 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
      PE8203概述：
          PE8203是VDS=18V,ID=6.5A，RDS(ON)<20m?，@VGS=4.5V，RDS(ON)<21m?，@VGS=3.8V，RDS(ON)<28m?，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8203的丝印是8203.PE8203提供SOT-23-6L封装.
          The PE8203 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

      PE8203特性：
      VDS = 18V, ID = 6.5A
      RDS(ON) < 20m? @ VGS=4.5V
      RDS(ON) < 21m? @VGS=3.8V
      RDS(ON) < 28m? @VGS=2.5V
      High Power and current handing capability
      Lead free product is acquired
      Surface Mount Package

      PE8203应用：
      Battery Protection
      Load switch

      PE8203典型应用及引脚：

      请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！

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