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      单N-MOS

      MX4408 SOP8

      N-Channel Enhancement Mode Power MOSFET,VDS=30V, ID=13A RDS(ON)(Typ.)=10mΩ@VGS=4.5V,RDS(ON)(Typ.)=7mΩ@VGS=10V,MX4408 SOP8,The MX4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.
        MX4408 Description:
            The MX4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.

        MX4408 Features:
        VDS=30V, ID=13A RDS(ON)(Typ.)=10mΩ@VGS=4.5V,RDS(ON)(Typ.)=7mΩ@VGS=10V
        Hign density cell design for ultra low Rdson
        Lead free product is acquired

        MX4408 Applications:
        Battery protection
        Load switch
        Power management

        MX4408 Pinout：


        MX4408 Ordering Information：
        Part Number
        Marking
        StorageTemperature
        Package
        Devices Per Reel
        MX4408
        4408
        -55°C to 150°C
        SOP-8
        3000




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