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单N-MOS

PED2512L PDFN2*5-6L

    PED2512L是VDS=18V,ID=10A,RDS(ON)<9.5m?@VGS=4.5V,RDS(ON)<9.8m?@VGS=4.2V,RDS(ON)<10.5m?@VGS=3.8V,RDS(ON)<13m?@VGS=2.5V的N沟道MOSFET。
    PED2512L的丝印是2512,PED2512L提供PDFN2*5-6L封装。
    The PED2512L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
    PED2512L概述:
        PED2512L是VDS=18V,ID=10A,RDS(ON)<9.5m?@VGS=4.5V,RDS(ON)<9.8m?@VGS=4.2V,RDS(ON)<10.5m?@VGS=3.8V,RDS(ON)<13m?@VGS=2.5V的N沟道MOSFET。PED2512L的丝印是2512,PED2512L提供PDFN2*5-6L封装。
        The PED2512L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PED2512L特性:
    VDS = 18V, ID = 10 A 
    RDS(ON) < 9.5m? @ VGS=4.5V 
    RDS(ON) < 9.8m? @ VGS=4.2V 
    RDS(ON) < 10.5m? @ VGS=3.8V 
    RDS(ON) < 13m? @ VGS=2.5V
    High Power and current handing capability 
    Lead free product is acquired 
    Surface Mount Package

    PED2512L应用:
    PWM applications 
    Load switch 
    Power management 
    Battery Protection

    PED2512L典型应用及引脚:


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