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    单N-MOS

    PED645K DFN3x3-8L

        PED645K是VDS=18V，ID=10A，RDS(ON)<6.5m?@VGS=4.5V，RDS(ON)<7m?@VGS=3.8V，RDS(ON<8.5m?@VGS=2.5V的N沟道MOSFET。
        PED645K的丝印是645K，PED645K提供DFN3x3-8L封装。
        The PED645K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
      PED645K概述：
          PED645K是VDS=18V，ID=10A，RDS(ON)<6.5m?@VGS=4.5V，RDS(ON)<7m?@VGS=3.8V，RDS(ON<8.5m?@VGS=2.5V的N沟道MOSFET。PED645K的丝印是645K，PED645K提供DFN3x3-8L封装。
          The PED645K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

      PED645K特性：
      VDS = 18V, ID = 10A
      RDS(ON) < 6.5m? @VGS=4.5V
      RDS(ON) < 7m?@VGS=3.8V
      RDS(ON) < 8.5m? @VGS=2.5V
      ESD Rating: 2000V HBM
      High Power and current handing capability
      Lead free product is acquired
      Surface Mount Package

      PED645K应用：
      PWM applications
      Load switch
      Power management
      Battery protection

      PED645K典型应用及引脚：

      请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！

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