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单P-MOS

PE30P65K TO252-2L

    PE30P65K是VDS=-30V,ID=-65A，RDS(ON)<5.2m?，@VGS=-20V，RDS(ON)<6m?，@VGS=-10V，RDS(ON)<8m?，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
    PE30P65K的丝印是PE30P65K.PE30P65K提供TO-252-2L封装.
    The PE30P65K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE30P65K概述：
        PE30P65K是VDS=-30V,ID=-65A，RDS(ON)<5.2m?，@VGS=-20V，RDS(ON)<6m?，@VGS=-10V，RDS(ON)<8m?，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.PE30P65K的丝印是PE30P65K.PE30P65K提供TO-252-2L封装.
        The PE30P65K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE30P65K特性：
    VDS = -30V, ID = -65A
    RDS(ON) < 5.2m? @ VGS=-20V
    RDS(ON) < 6m? @ VGS=-10V
    RDS(ON) < 8m? @VGS=-4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE30P65K应用：
    PWM applications
    Load switch
    Power management
    Battery Protection

    PE30P65K典型应用及引脚图：

    请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！

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