云顶贵宾会(中国游)官方网站_App Store

    • 服务热线: 13823761625

    产品中心

    联系我们

    当前位置：云顶贵宾会 >> 产品中心 >> Mosfet >> 单P-MOS

    单P-MOS

    PE30P11DS SOP8

        PE30P11DS是VDS=-30V,ID=-10A，RDS(ON)<17m?，@VGS=-10V，RDS(ON)<25m?，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
        PE30P11DS的丝印是PE30P11DS.PE30P11DS提供SOP-8封装. 
      The PE30P11DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
      PE30P11DS概述：
          PE30P11DS是VDS=-30V,ID=-10A，RDS(ON)<17m?，@VGS=-10V，RDS(ON)<25m?，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.PE30P11DS的丝印是PE30P11DS.PE30P11DS提供SOP-8封装.
          The PE30P11DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

      PE30P11DS特性：
      VDS = -30V, ID = -10A
      RDS(ON) < 17m? @ VGS=-10V
      RDS(ON) < 25m? @VGS=-4.5V
      High Power and current handing capability
      Lead free product is acquired
      Surface Mount Package

      PE30P11DS应用：
      PWM applications
      Load switch
      Power management

      PE30P11DS典型应用及引脚图：

      请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！

      *

      *

      *

      *

    相关产品



    【网站地图】【sitemap】