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单P-MOS

PE40P36K TO252-2L

    PE40P36K是VDS=-40V,ID=-36A，RDS(ON)<21m?，@VGS=-10V，RDS(ON)<32m?，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
    PE40P36K的丝印是PE40P36K.PE40P36K提供TO-252-2L封装.
    The PE40P36K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE40P36K概述：
        PE40P36K是VDS=-40V,ID=-36A，RDS(ON)<21m?，@VGS=-10V，RDS(ON)<32m?，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.PE40P36K的丝印是PE40P36K.PE40P36K提供TO-252-2L封装.
        The PE40P36K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE40P36K特性：
    VDS = -40V, ID = -36A
    RDS(ON) < 21m? @ VGS=-10V
    RDS(ON) < 32m? @ VGS=-4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE40P36K应用：
    DC-DC converter
    Load switch
    Power management

    PE40P36K典型应用及引脚图：

    请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！

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