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    单P-MOS

    PED20D09M PDFN3.3x3.3-8L

        PED20D09M是VDS=-18V，ID=-9A，RDS(ON)<20m?@VGS=-10V，RDS(ON)<25m?@VGS=-4.5V，RDS(ON)<30m?@VGS=-2.5V的P沟道MOSFET。
        PED20D09M的丝印是20D09M,PED20D09M提供PDFN3.3x3.3-8L封装。
        The PED20D09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
      PED20D09M概述：
          PED20D09M是VDS=-18V，ID=-9A，RDS(ON)<20m?@VGS=-10V，RDS(ON)<25m?@VGS=-4.5V，RDS(ON)<30m?@VGS=-2.5V的P沟道MOSFET。PED20D09M的丝印是20D09M,PED20D09M提供PDFN3.3x3.3-8L封装。
          The PED20D09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

      PED20D09M特性：
      VDS = -18V, ID = -9A
      RDS(ON) < 20m? @VGS=-10V
      RDS(ON) < 25m? @VGS=-4.5V
      RDS(ON) < 30m? @VGS=-2.5V
      High Power and current handing capability
      Lead free product is acquired
      Surface Mount Package

      PED20D09M应用：
      PWM applications
      Load switch
      Power management

      PED20D09M典型应用及引脚：

      请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！

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