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双P-MOS

PE30P17S SOP8

    PE30P17S是VDS=-30V,ID=-17A,RDS(ON)<6.5m?,@VGS=-10V,RDS(ON)<10m?,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
    PE30P17S的丝印是PE30P17S.PE30P17S提供SOP-8封装.
    The PE30P17S uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE30P17S概述:
        PE30P17S是VDS=-30V,ID=-17A,RDS(ON)<6.5m?,@VGS=-10V,RDS(ON)<10m?,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.PE30P17S的丝印是PE30P17S.PE30P17S提供SOP-8封装.
        The PE30P17S uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE30P17S特性:
    VDS = -30V, ID = -17A
    RDS(ON) < 6.5m? @ VGS=-10V
    RDS(ON) < 10m?@VGS=-4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE30P17S应用:
    PWM applications
    Load switch
    Power management
    Battery Protection

    PE30P17S典型应用及引脚图:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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