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    N+P-MOS

    CST3012 TO252-4

        CST3012是一款N-Channel：VDS=30V,ID=20A;P-Channel：VDS=-30V,ID=-20A的双沟道MOSFET.
        The CST3012 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, whichprovide excellent RDSON and gate charge for most of the synchronous buck converter applications .
        The CST3012 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
      CST3012 Description:
          CST3012是一款N-Channel：VDS=30V,ID=20A;P-Channel：VDS=-30V,ID=-20A的双沟道MOSFET.
          The CST3012 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, whichprovide excellent RDSON and gate charge for most of the synchronous buck converter applications .
          The CST3012 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.

      CST3012 Features:
      100% EAS Guaranteed
      Green Device Available
      Super Low Gate Charge
      Excellent CdV/dt effect decline
      Advanced high cell density Trench technology

      CST3012 Product Summary:

      BVDSS
      RDSON
      ID
      30V
      21m?
      20A
      -30V
      28m?
      -20A

      CST3012 TO252-4 Pin Configuration:
      请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！

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