CST4G03 Description:
CST4G03是N:VDS=30V,REDSON=29mΩ,ID=4A;P:VDS=-30V,REDSON=55mΩ,ID=-4A的N+P双沟道Mosfet，封装是SOT23-6。
The CST4G03 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The CST4G03 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The CST4G03 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
CST4G03 Features：
Advanced high cell density Trenchtechnology
Super Low Gate Charge
Excellent CdV/dt effect decline
Green Device Available
CST4G03 Applications:
Power management in half bridge and inverters
DC-DC Converter
Load Switch
CST4G03 Product Summary：
|
BVDSS
|
RDSON
|
ID
|
|
30V
|
29mΩ
|
4A
|
|
-30V
|
55mΩ
|
-4A
|
CST4G03 SOT23-6L Pin Configuration：
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