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    单N-MOS

    PE8262M PDFN3.3x3.3-8L

        PE8262M是VDS=20V,ID=25A,RDS(ON)<3.5m?,@VGS=4.5V,RDS(ON)<5.0m?,@VGS=2.5V,RDS(ON)<8.0m?,@VGS=1.8V的N-Channel Enhancement Mode Power MOSFET.
        PE8262M的丝印是PE8262M.PE8262M提供PDFN3.3x3.3-8L封装.
        The PE8262M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
      PE8262M概述:
          PE8262M是VDS=20V,ID=25A,RDS(ON)<3.5m?,@VGS=4.5V,RDS(ON)<5.0m?,@VGS=2.5V,RDS(ON)<8.0m?,@VGS=1.8V的N-Channel Enhancement Mode Power MOSFET.
          PE8262M的丝印是PE8262M.PE8262M提供PDFN3.3x3.3-8L封装.
          The PE8262M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

      PE8262M特性:
      VDS = 20V, ID = 25A
      RDS(ON) < 3.5m?@VGS=4.5V
      RDS(ON) < 5.0m? @VGS=2.5V
      RDS(ON) < 8.0m?@VGS=1.8V
      High Power and current handing capability
      Lead free product is acquired
      Surface Mount Package

      PE8262M应用:
      PWM applications
      Load switch
      Battery Protection

      PE8262M典型应用及引脚:



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