云顶贵宾会(中国游)官方网站_App Store

    • 服务热线: 13823761625

    产品中心

    联系我们

    当前位置：云顶贵宾会 >> 产品中心 >> Mosfet >> 单N-MOS

    单N-MOS

    PE8260M PDFN3.3x3.3-8L

        PE8260M是VDS=20V,ID=22A,RDS(ON)<4m?,@VGS=4.5V,RDS(ON)<5.4m?,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
        PE8260M的丝印是PE8260M.PE8260M提供PDFN3.3x3.3-8L封装.
        The PE8260M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
      PE8260M概述：
          PE8260M是VDS=20V,ID=22A,RDS(ON)<4m?,@VGS=4.5V,RDS(ON)<5.4m?,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
          PE8260M的丝印是PE8260M.PE8260M提供PDFN3.3x3.3-8L封装.
          The PE8260M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

      PE8260M特性：
      VDS = 20V, ID = 22A
      RDS(ON) < 4m? @ VGS=4.5V
      RDS(ON) < 5.4m? @VGS=2.5V
      High Power and current handing capability
      Lead free product is acquired
      Surface Mount Package

      PE8260M应用：
      PWM applications
      Load switch

      PE8260M典型应用及引脚：

      请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！

      *

      *

      *

      *

    相关产品

    【网站地图】【sitemap】