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    当前位置:云顶贵宾会 >> 产品中心 >> Mosfet >> 单N-MOS

    单N-MOS

    PE8250K TO252-2L

        PE8250K是VDS=20V,ID=50A,RDS(ON)<6m?,@VGS=4.5V,RDS(ON)<8m?,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
        PE8250K的丝印是PE8250K.PE8250K提供TO-252-2L封装.
        The PE8250K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
      PE8250K概述:
          PE8250K是VDS=20V,ID=50A,RDS(ON)<6m?,@VGS=4.5V,RDS(ON)<8m?,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
          PE8250K的丝印是PE8250K.PE8250K提供TO-252-2L封装.
          The PE8250K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

      PE8250K特性:
      VDS = 20V, ID = 50A
      RDS(ON) < 6m? @ VGS=4.5V
      RDS(ON) < 8m? @ VGS=2.5V
      High Power and current handing capability
      Lead free product is acquired
      Surface Mount Package

      PE8250K应用:
      PWM applications
      Load switch

      PE8250K典型应用及引脚:

      请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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