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    单N-MOS

    PE8107Z0 PDFN2x5-6L

        PE8107Z0是VDS=18V,ID=7A，RDS(ON)<15m?，@VGS=4.5V，RDS(ON)<17m?，@VGS=4V，RDS(ON)<18m?，@VGS=3.1V，RDS(ON)<20m?，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
        PE8107Z0的丝印是8107.PE8107Z0提供PDFN2x5-6L封装.
        The PE8107Z0 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
      PE8107Z0概述：
          PE8107Z0是VDS=18V,ID=7A，RDS(ON)<15m?，@VGS=4.5V，RDS(ON)<17m?，@VGS=4V，RDS(ON)<18m?，@VGS=3.1V，RDS(ON)<20m?，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8107Z0的丝印是8107.PE8107Z0提供PDFN2x5-6L封装.
          The PE8107Z0 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

      PE8107Z0特性：
      VDS = 18V, ID = 7A
      RDS(ON) < 15m? @ VGS=4.5V
      RDS(ON) < 17m? @VGS=4V
      RDS(ON) < 18m? @VGS=3.1V
      RDS(ON) < 20m? @VGS=2.5V
      ESD Rating: 4000V HBM
      High Power and current handing capability
      Lead free product is acquired
      Surface Mount Package

      PE8107Z0应用：
      PWM applications
      Load switch
      Power management

      PE8107Z0典型应用及引脚：

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