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    单N-MOS

    MX2312A SOT23

        MX2312A是VDS=20V,ID=4.5A,RDS(ON)(Typ.)=21mΩ,@VGS=2.5V,RDS(ON)(Typ.)=18mΩ,@VGS=4.5V的N沟道MOSFET.
        MX2312A提供SOT23封装.
        The MX2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.

      MX2312A概述:
          MX2312A是VDS=20V,ID=4.5A,RDS(ON)(Typ.)=21mΩ,@VGS=2.5V,RDS(ON)(Typ.)=18mΩ,@VGS=4.5V的N沟道MOSFET.MX2312A提供SOT23封装.
          The MX2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.

      MX2312A特性:
      VDS=20V, ID=4.5A
      RDS(ON)(Typ.)=21mΩ @ VGS=2.5V
      RDS(ON)(Typ.)=18mΩ @ VGS=4.5V
      High Power and current handing capability
      Lead free product is acquired
      Surface Mount Package

      MX2312A应用:

      Battery protection
      Load switch
      Power management

      MX2312A订购信息:

      Part Number

      StorageTemperature

      Package

      Devices Per Reel

      MX2312A

      -55°C to 150°C

      SOT-23

      3000


      MX2312A典型应用及封装图:

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