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    MX6018ÊÇVDS=60V£¬ID=18A,RDS(ON)(Typ.)10mΩ@Vgs=10V,RDS(ON)(Typ.)13.5mΩ@Vgs=4.5VµÄN¹µµÀÔöÇ¿Ð͹¦ÂÊMOSFET£¬
    MX6018Ë¿Ó¡£º6018£¬MX6018ÌṩSOP8·â×°£¬
    The MX6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.

MX6018ÌØÐÔ£º

VDS =60V£¬ID=18A

RDS(ON)(Typ.)10mΩ @ Vgs=10V

RDS(ON)(Typ.)13.5mΩ @ Vgs=4.5V

High density cell design for ultra low Rdson

Fully characterized Avalanche voltage and current

Special process technology for high ESD capability

Good stability and uniformity with high EAS Excellent package for good heat dissipation

MX6018Ë¿Ó¡£º6018

MX6018ÌṩSOP8·â×°

Power switching application

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply