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单N-MOS

MXD3080K TO252

    MXD3080K是VDS=30V, ID=80A,RDS(ON)(Typ.)=3.7mΩ@VGS=10V,RDS(ON)(Typ.)=6mΩ@VGS=4.5V的N沟道MOS，提供TO252封装。丝�。�3080K
    These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
    These devices are well suited for high efficiency fast switching applications.
    MXD3080K Description：
        MXD3080K是VDS=30V, ID=80A,RDS(ON)(Typ.)=3.7mΩ@VGS=10V,RDS(ON)(Typ.)=6mΩ@VGS=4.5V的N沟道MOS，提供TO252封装。丝印：3080K
        These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
        These devices are well suited for high efficiency fast switching applications.

    MXD3080K Features：
    VDS=30V, ID=80A
    RDS(ON)(Typ.)=3.7mΩ@VGS=10V
    RDS(ON)(Typ.)=6mΩ@VGS=4.5V
    Improved dv/dt capability
    100% EAS Guaranteed
    Fast switching

    MXD3080K Application：
    NB / VGA / VCORE
    POL Applications
    SMPS 2nd SR

    MXD3080K Pinout：

    MXD3080K Ordering Information：
    Part Number
    StorageTemperature
    Package
    Devices Per Reel
    MXD3080K
    -55°C to 150°C
    TO-252
    -
    请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！

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