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    单N-MOS

    CST120N03 TO252

        CST120N03是VDS=30V,,ID=120A,RDSON=3.0mΩ的N沟道Mosfets,提供TO252封装。
        The CST120N03 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
        The CST120N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
      CST120N03 Description/概述:
          CST120N03是VDS=30V,,ID=120A,RDSON=3.0mΩ的N沟道Mosfets,提供TO252封装。
          The CST120N03 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
          The CST120N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

      CST120N03 Features/特性:
      Super Low Gate Charge
      100% EAS Guaranteed
      Green Device Available
      Excellent CdV/dt effect decline
      Advanced high cell density Trench technology

      CST120N03 Product Summary/产品概览:

      BVDSS
      RDSON
      ID
      30V
      3.0
      120A

      CST120N03 Pin Configuration/引脚配置:


      CST120N03 Package information/封装信息:




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