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    单N-MOS

    CST20N10 TO252

        CST20N10是BVDSS=100V,RDSON=65mΩ,ID=20A的N沟道快速切换Mosfets。提供TO252封装。
        The CST20N10 is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
        The CST20N10 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
      CST20N10 Description/描述:
          CST20N10是BVDSS=100V,RDSON=65mΩ,ID=20A的N沟道快速切换Mosfets。提供TO252封装。
          The CST20N10 is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
          The CST20N10 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

      CST20N10 Features/特性:
      Super Low Gate Charge
      Green Device Available
      Excellent Cdv/dt effect decline
      Advanced high cell density Trench technology

      CST20N10 Product Summary/产品概览:

      BVDSS
      RDSON
      ID

      100V

      65mΩ

      20A


      CST20N10 TO252 Pin Configuration/引脚配置:
      请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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