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    单N-MOS

    CST30N06 TO-252

        CST30N06是BVDSS=60V,RDSON=23mΩ,ID=30A的N-Ch快速切换Mosfets。提供TO-252封装。
        The CST30N06 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
        The CST30N06 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
      CST30N06 Description/描述:
          CST30N06是BVDSS=60V,RDSON=23mΩ,ID=30A的N-Ch快速切换Mosfets。提供TO-252封装。
          The CST30N06 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
          The CST30N06 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.

      CST30N06 Features/特性:
      100% EAS Guaranteed 
      Green Device Available 
      Super Low Gate Charge 
      Excellent CdV/dt effect decline 
      Advanced high cell density Trench technology

      CST30N06 Product Summary/产品概览:
      BVDSS
      RDSON
      ID

      60V

      23mΩ

      30A


      CST30N06 TO252 Pin Configuration/引脚配置:


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