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    单N-MOS

    PE8350G DFN5x6-8L

        PE8350G是VDS=30V,ID=50A,RDS(ON)<6m?@VGS=10V,RDS(ON)<8.2m?@VGS=4.5V的N沟道MOSFET。
        PE8350G的丝印是PE8350G,PE8350G提供DFN5x6-8L封装。
        The PE8350G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
      PE8350G概述:
          PE8350G是VDS=30V,ID=50A,RDS(ON)<6m?@VGS=10V,RDS(ON)<8.2m?@VGS=4.5V的N沟道MOSFET。
          PE8350G的丝印是PE8350G,PE8350G提供DFN5x6-8L封装。
          The PE8350G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

      PE8350G特性:
      VDS = 30V, ID = 50A
      RDS(ON) < 6m? @ VGS=10V
      RDS(ON) < 8.2m? @VGS=4.5V
      High Power and current handing capability
      Lead free product is acquired
      Surface Mount Package

      PE8350G应用:
      Battery management
      Motor controller and driver
      PWM applications
      Load switch

      PE8350G典型应用及引脚:



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