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    单N-MOS

    PE8335M PDFN3.3x3.3-8L

        PE8335M是VDS=30V,ID=35A,RDS(ON)<7.5m?@VGS=10V,RDS(ON)<14m?@VGS=4.5V的N沟道MOSFET。
        PE8335M的丝印是PE8335M,PE8335M提供PDFN3.3x3.3-8L封装。
        The PE8335M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
      PE8335M概述:
          PE8335M是VDS=30V,ID=35A,RDS(ON)<7.5m?@VGS=10V,RDS(ON)<14m?@VGS=4.5V的N沟道MOSFET。
          PE8335M的丝印是PE8335M,PE8335M提供PDFN3.3x3.3-8L封装。
          The PE8335M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

      PE8335M特性:
      VDS = 30V, ID = 35A
      RDS(ON) < 7.5m? @ VGS=10V
      RDS(ON) < 14m? @VGS=4.5V
      High Power and current handing capability
      Lead free product is acquired
      Surface Mount Package

      PE8335M应用:
      PWM applications
      Load switch

      PE8335M典型应用及引脚:

      请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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