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单P-MOS

PE3115 SOT23-3L

    PE3115是VDS=-30V,ID=-5.5A，RDS(ON)<27m?，@VGS=-10V，RDS(ON)<31m?，@VGS=-4.5V，RDS(ON)<42m?，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
    PE3115的丝印是3115.PE3115提供SOT-23-3L封装.
    The PE3115 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE3115概述：
        PE3115是VDS=-30V,ID=-5.5A，RDS(ON)<27m?，@VGS=-10V，RDS(ON)<31m?，@VGS=-4.5V，RDS(ON)<42m?，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.PE3115的丝印是3115.PE3115提供SOT-23-3L封装.
        The PE3115 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE3115特性：
    VDS = -30V, ID = -5.5A
    RDS(ON) < 27m? @ VGS=-10V
    RDS(ON) < 31m? @VGS=-4.5V
    RDS(ON) < 42m? @VGS=-2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE3115应用：
    PWM applications
    Load switch
    Power management

    PE3115典型应用及引脚图：

    请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！

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