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    单P-MOS

    PE7280G DFN5x6-8L

        PE7280G是VDS=-20V,ID=-80A，RDS(ON)<6mΩ，@VGS=-10V，RDS(ON)<7.2mΩ，@VGS=-4.5V，RDS(ON)<11.2mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET
        PE7280G的丝印是PE7280G.PE7280G提供DFN5x6-8L封装.
        The PE7280G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
      PE7280G概述：
          PE7280G是VDS=-20V,ID=-80A，RDS(ON)<6mΩ，@VGS=-10V，RDS(ON)<7.2mΩ，@VGS=-4.5V，RDS(ON)<11.2mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET
          PE7280G的丝印是PE7280G.PE7280G提供DFN5x6-8L封装.
          The PE7280G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

      PE7280G特性：
      VDS = -20V, ID = -80A
      RDS(ON) < 6mΩ @ VGS=-10V
      RDS(ON) < 7.2mΩ @ VGS=-4.5V
      RDS(ON) < 11.2mΩ @VGS=-2.5V
      High Power and current handing capability
      Lead free product is acquired 
      Surface Mount Package

      PE7280G应用：
      PWM applications
      Load switch
      Power management

      PE7280G典型应用及引脚：

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