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      单P-MOS

      PE7209M PDFN3.3x3.3-8L

          PE7209M是VDS=-20V,ID=-25A，RDS(ON)<16mΩ，@VGS=-4.5V，RDS(ON)<22mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
          PE7209M的丝印是PE7209M.PE7209M提供PDFN3.3x3.3-8L封装.
          The PE7209M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
        PE7209M概述：
            PE7209M是VDS=-20V,ID=-25A，RDS(ON)<16mΩ，@VGS=-4.5V，RDS(ON)<22mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
            PE7209M的丝印是PE7209M.PE7209M提供PDFN3.3x3.3-8L封装.
            The PE7209M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

        PE7209M特性：
        VDS = -20V, ID = -25A
        RDS(ON) < 16mΩ @ VGS=-4.5V
        RDS(ON) < 22mΩ @VGS=-2.5V
        High Power and current handing capability
        Lead free product is acquired
        Surface Mount Package

        PE7209M应用：
        PWM applications
        Load switch
        Power management
        Battery protection

        PE7209M典型应用及引脚：

        请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！

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