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    单P-MOS

    PE7165G DFN5x6-8L

        PE7165G是VDS=-18V,ID=-65A，RDS(ON)<4mΩ，@VGS=-4.5V，RDS(ON)<5.6mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
        PE7165G的丝印是PE7165G.PE7165G提供DFN5x6-8L封装.
        The PE7165G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
      PE7165G概述：
          PE7165G是VDS=-18V,ID=-65A，RDS(ON)<4mΩ，@VGS=-4.5V，RDS(ON)<5.6mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
          PE7165G的丝印是PE7165G.PE7165G提供DFN5x6-8L封装.
          The PE7165G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

      PE7165G特性：
      VDS = -18V, ID = -65A
      RDS(ON) < 4mΩ @ VGS=-4.5V
      RDS(ON) < 5.6mΩ @VGS=-2.5V
      High Power and current handing capability
      Lead free product is acquired
      Surface Mount Package

      PE7165G应用：
      PWM applications
      Load switch
      Power management

      PE7165G典型应用及引脚：

      请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！

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