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      单P-MOS

      MXD60P02 TO252-3L

          MXD60P02是VDS=-20V,ID=-60A，RDS(ON)(Typ.)=11mΩ@VGS=-2.5V，RDS(ON)(Typ.)=8mΩ@VGS=-4.5V的P沟道MOSFET.
          The MXD60P02 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a Battery protection or in other Switching application.
        MXD60P02概述:
            MXD60P02是VDS=-20V,ID=-60A，RDS(ON)(Typ.)=11mΩ@VGS=-2.5V，RDS(ON)(Typ.)=8mΩ@VGS=-4.5V的P沟道MOSFET.
            The MXD60P02 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a Battery protection or in other Switching application.

        MXD60P02特性：
        VDS=-20V,ID=-60A
        RDS(ON)(Typ.)=11mΩ@VGS=-2.5V 
        RDS(ON)(Typ.)=8mΩ@VGS=-4.5V

        MXD60P02应用：
        Battery protection
        Load switch
        Uninterruptible power supply

        MXD60P02订购信息：
        Part Number
        StorageTemperature
        Package
        Devices Per Reel
        MXD60P02

        -55°C to 150°C
        TO-252-3L
        2500

        MXD60P02典型应用及引脚配置：
        请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！

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