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    单P-MOS

    CST08P06S SOP8

        CST08P06S是BVDSS=-60V,ID=-8.0A,RDSON=70mΩ的P沟道快速切换mosfets。
        The CST08P06S is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
        The CST08P06S meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
      CST08P06S Description/概述:
          CST08P06S是BVDSS=-60V,ID=-8.0A,RDSON=70mΩ的P沟道快速切换mosfets。
          The CST08P06S is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
          The CST08P06S meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

      CST08P06S Features/特性:
      100% EAS Guaranteed
      Green Device Available
      Super Low Gate Charge
      Excellent CdV/dt effect decline
      Advanced high cell density Trench technology

      CST08P06S Product Summary:

      BVDSS
      RDSON
      ID

      -60V

      70mΩ

      -8.0A


      CST08P06S SOP8 Pin Configuration:
      请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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