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    单P-MOS

    PE73100G DFN5*6-8L

        PE73100G是VDS=-30V, ID=-100A,RDS(ON)<3.2m?@VGS=-10V,RDS(ON)<5m?@VGS=-4.5V的P沟道增强模式电源Mosfet
        The PE73100G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
      PE73100G Description/描述:
          PE73100G是VDS=-30V, ID=-100A,RDS(ON)<3.2m?@VGS=-10V,RDS(ON)<5m?@VGS=-4.5V的P沟道增强模式电源Mosfet
          The PE73100G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

      PE73100G Features/特性:
      VDS=-30V, ID=-100A
      RDS(ON)<3.2m?@VGS=-10V
      RDS(ON)<5m?@VGS=-4.5V
      High Power and current handing capability
      Lead free product is acquired
      Surface Mount Package

      PE73100G Application/应用:
      PWM applications
      Load switch
      Power management


      PE73100G Typical Electrical and Thermal Characteristics/典型的电气和热特性:
      请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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