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    单P-MOS

    CST3419 PDFN3333-8L

        CST3419是BVDSS=-30V,RDSON=16mΩ,ID=-32A的P沟道快速切换mosfets。提供PDFN3333-8L封装。
        The CST3419 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications     The CST3419 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
      CST3419 Description/描述:
          CST3419是BVDSS=-30V,RDSON=16mΩ,ID=-32A的P沟道快速切换mosfets。提供PDFN3333-8L封装。
          The CST3419 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
          The CST3419 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

      CST3419 Features/特性:
      100% EAS Guaranteed
      Green Device Available
      Super Low Gate Charge
      Excellent CdV/dt effect decline
      Advanced high cell density Trench technology

      CST3419 Product Summary/产品概览:
      BVDSS
      RDSON
      ID
      -30V
      16mΩ
      -32A
      CST3419 PDFN3333-8L Pin Configuration/引脚配置:
      请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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