云顶贵宾会(中国游)官方网站_App Store

服务热线: 13823761625

产品中心

联系我们

当前位置：云顶贵宾会 >> 产品中心 >> Mosfet >> 双N-MOS

双N-MOS

PE8205 SOT23-6L

    PE8205是VDS=20V,ID=6A，RDS(ON)<26m?，@VGS=4.5V，RDS(ON)<28m?，@VGS=3.8V，RDS(ON)<36m?，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
    PE8205的丝印是8205.PE8205提供SOT-23-6L封装.
    The PE8205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8205概述：
        PE8205是VDS=20V,ID=6A，RDS(ON)<26m?，@VGS=4.5V，RDS(ON)<28m?，@VGS=3.8V，RDS(ON)<36m?，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
        PE8205的丝印是8205.PE8205提供SOT-23-6L封装.
        The PE8205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8205特性：
    VDS = 20V, ID = 6A
    RDS(ON) < 26m? @ VGS=4.5V
    RDS(ON) < 28m? @VGS=3.8V
    RDS(ON) < 36m? @VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8205应用：
    Battery Protection
    Load switch

    PE8205典型应用及引脚：

    请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！

    *

    *

    *

    *

相关产品

【网站地图】【sitemap】