MXD50N06概述：
MXD50N06是VDS=60V, ID=50AR , R DS(ON) (Typ.)=11.5mΩ @ VGS=10V的N沟道MOS，MXD50N06提供TO-252封装。
The MXD50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) .
Those devices are suitable for use in PWM, load switching and general purpose applications.
MXD50N06是VDS=60V, ID=50AR , R DS(ON) (Typ.)=11.5mΩ @ VGS=10V的N沟道MOS，MXD50N06提供TO-252封装。
The MXD50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) .
Those devices are suitable for use in PWM, load switching and general purpose applications.
MXD50N06特性：
VDS=60V, ID=50A
R DS(ON) (Typ.)=11.5mΩ @ VGS=10V
Ultra Low On-Resistance
High UIS and UIS 100% Test
MXD50N06应用：
Power switching application
Load switch
MXD50N06订购信息:
MXD50N06订购信息:
| MXD50N06 ORDERING INFORMATION | |||
| Device | StorageTemperature | Package | Devices Per Reel |
| MXD50N06 | -55°C to 175°C | TO-252 | - |
MXD50N06典型应用及脚位图：
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