云顶贵宾会(中国游)官方网站_App Store



  • 服务热线: 13823761625

    产品中心

    联系我们

    当前位置:云顶贵宾会 >> 产品中心 >> Mosfet >> 单P-MOS

    单P-MOS

    PE3117C SOT23-3L

        PE3117C是VDS=-30V,ID=-7A,RDS(ON)<22m?,@VGS=-10V,RDS(ON)<32m?,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
        PE3117C的丝印是3117C.PE3117C提供SOT-23-3L封装. 
       The PE3117C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
      PE3117C概述:
          PE3117C是VDS=-30V,ID=-7A,RDS(ON)<22m?,@VGS=-10V,RDS(ON)<32m?,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
          PE3117C的丝印是3117C.PE3117C提供SOT-23-3L封装.
          The PE3117C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

      PE3117C特性:
      VDS = -30V, ID = -7A
      RDS(ON) < 22m? @ VGS=-10V
      RDS(ON) < 32m? @VGS=-4.5V
      ESD Rating: ≥4000V HBM
      High Power and current handing capability
      Lead free product is acquired
      Surface Mount Package

      PE3117C应用:
      PWM applications
      Load switch
      Power management

      PE3117C典型应用及引脚:

      请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

      *

      *

      *

      *

    相关产品

    【网站地图】【sitemap】