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单P-MOS

PE3117 SOT23-3L

    PE3117是VDS=-30V,ID=-7A,RDS(ON)<22m?,@VGS=-10V,RDS(ON)<30m?,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
    PE3117的丝印是3117.PE3117提供SOT-23-3L封装.
    The PE3117 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE3117概述:
        PE3117是VDS=-30V,ID=-7A,RDS(ON)<22m?,@VGS=-10V,RDS(ON)<30m?,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
        PE3117的丝印是3117.PE3117提供SOT-23-3L封装.
        The PE3117 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE3117特性:
    VDS = -30V, ID = -7A
    RDS(ON) < 22m? @ VGS=-10V
    RDS(ON) < 30m? @VGS=-4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE3117应用:
    PWM applications
    Load switch
    Power management

    PE3117典型应用及引脚图:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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